M59DR032A

The M59DR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.The device supports asynchronous page mode from all the blocks of the memory array.

The array matrix organization allows each block to be erased and reprogrammed without affecting other blocks. All blocks are protected against programming and erase at Power Up. Blocks can be unprotected to make changes in the application and then reprotected.

Instructions for Read/Reset, Auto Select, Write Configuration Register, Programming, Block Erase, Bank Erase, Erase Suspend, Erase Resume,Block Protect, Block Unprotect, Block Locking,CFI Query, are written to the memory through
a Command Interface using standard microprocessor
write timings.

The device is offered in TSOP48 (12 x 20 mm) and in FBGA48 0.75 mm ball pitch packages.When shipped all bits of the M59DR032 device are at the logical level '1'.

Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other condition